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LPDDR4 Selection Guide: Part Number and Naming Rules Explained
Time:2025-12-09 Views:

LPDDR4 Selection Guide: Part Number and Naming Rules Explained -Samunsg,SK Hynix,Micron


Many customers and R&D teams struggle to distinguish part numbers and naming conventions across different Memory products. I have compiled commonly‑used memory components available on the market as a reference for hardware engineers and digital enthusiasts.

In smartphones, tablets and low‑power devices, LPDDR4 SDRAM has become the mainstream solution thanks to its high bandwidth and low‑power characteristics. However, complex part‑number naming schemes from vendors including Samsung, Micron and SK Hynix often confuse users and practitioners.

This article provides an in‑depth breakdown of LPDDR4 die naming rules, vendor‑specific technical features and practical component‑selection guidelines covering six major manufacturers. It will help you master the underlying logic and quickly build practical part‑selection skills.


1. Samsung

As the global leader in the DRAM market, Samsung’s LPDDR4 components start with the prefix K4F, featuring a 16‑character coding scheme. The core rules are defined below:

LPDDR4 Selection Guide: Part Number and Naming Rules Explained(Image1)


First three characters:

K4: DRAM die identifier

F: Stands for LPDDR4X SDRAM

4th‑5th character: Density indicator. Example:

6E: 16 Gb, 8K / 32 ms

6th‑7th character: Data bus width. For instance, 3s denotes a 32‑bit interface.

8th character: Bank configuration; the digit 4 represents an 8‑Bank design.

9th character: Interface voltage specification.

10th character: Product generation identifier.

Suffix codes:

M: Package type (e.g. FBGA)

G: Temperature and power‑rating class

CJ: Performance grade and batch code


2. Micron

Micron LPDDR4 parts use the MT53E prefix, built exclusively for the LPDDR4 standard. Example part number: MT53E512M32D2NP‑046 WT:E

LPDDR4 Selection Guide: Part Number and Naming Rules Explained(Image2)


MT53E: LPDDR4 family identifier and operating voltage grade

512M: 512 Mb per die (equivalent to 64 MB)

32: 32‑bit data width

D2: Addressing scheme and die count (D2 = 2‑die configuration)

DS: Package code; DS refers to a 300‑ball WFBGA package

046: Timing parameter; 046 corresponds to 468 ps at 2133 MHz (4266 Mbps effective data rate)

WT:E: Package site and batch code (WT denotes Taiwan packaging facility)


3. SK Hynix

SK Hynix LPDDR4 dies begin with the identifier H9. Example part number: H9HC4GXXXXX

LPDDR4 Selection Guide: Part Number and Naming Rules Explained(Image3)


H5: DRAM product‑line marker

TC4G: 4 Gb density (TC = Mobile LPDDR4)

63C: 32‑bit bus width (internal vendor code)

FR: Frequency and timing bin; FR corresponds to 1600 MHz with 14‑14‑14 timings

PBA: FBGA package and batch identifier

Performance grading:

CJR (H5AN8G8NCJR): High compatibility for general‑purpose designs

DJR (H5ANAG6NCJR): Better overclocking headroom for performance‑oriented applications


4. Nanya

Nanya LPDDR4 components carry NT6 or NT5 as the leading prefix. Example: NT6CL512T32BP‑H1

LPDDR4 Selection Guide: Part Number and Naming Rules Explained(Image4)


NT6: LPDDR4 product family

CL: Consumer‑grade; IL stands for industrial‑grade

512T: 512 Mb die density

32: 32‑bit bus width

BP‑H1: Package and speed bin (H1 = 1600 MHz)

Market positioning: Nanya DRAM delivers cost‑effective performance with limited overclocking capability, suited for entry‑level cost‑sensitive devices.


5. CXMT (ChangXin Memory Technologies)

As China’s domestic DRAM flagship vendor, CXMT LPDDR4 parts start with the CX prefix. Example: CXDB5CCAM‑ML

LPDDR4 Selection Guide: Part Number and Naming Rules Explained(Image5)


CX: Proprietary CXMT die marker

DB: DRAM LPDDR4X designation

5: Density specification: 32 Gb

C: Package type, 200‑ball FBGA

C: Memory configuration: 32‑bit, dual‑channel, 2‑Chip‑Select

Suffix L: Speed‑grade code (e.g. 2133 MHz / 4266 Mbps)

Key advantages: Competitive pricing and stable supply chain, qualified by mainstream OEM device manufacturers.


6. Kioxia

No valid public datasheet information is available for Kioxia (formerly Toshiba Storage) LPDDR4 memory devices.

Conclusion

Understanding die naming conventions is like obtaining a “selection cipher book”. Whether you opt for Samsung D‑die for ultimate performance or domestic CXMT components for local‑supply designs, the correct memory selection maximises your hardware potential. Going forward, as LPDDR5X and LPDDR6 gain market adoption, these coding rules will continue to evolve — yet the fundamental evaluation criteria remain unchanged: density, bandwidth and reliability form the eternal performance triangle.


Note

Certain part numbers may contain vendor‑specific custom variations. Always refer to the official datasheet for final specifications.

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